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Freescale Semiconductor Technical Data
Document Number: MRF6S21190H Rev. 1, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 29% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW Output Power Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Designed for Digital Predistortion Error Correction Systems * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S21190HR3 MRF6S21190HSR3
2110 - 2170 MHz, 54 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF6S21190HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF6S21190HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ CW Value - 0.5, +68 - 0.5, +12 32, +0 - 65 to +150 150 200 175 1 Unit Vdc Vdc Vdc C C C W W/C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 85C, 120 W CW Case Temperature 83C, 56 W CW Symbol RJC Value (1,2) 0.29 0.30 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6S21190HR3 MRF6S21190HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 420 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 4.2 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Equivalent Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Cout Ciss -- -- -- 2.8 185 526 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1 2 0.12 2 2.8 0.21 3 4 0.31 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 14.5 26 5.5 -- -- 16 29 6.1 - 38 - 13 17.5 -- -- - 35 -8 dB % dB dBc dB MHz
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 2110 - 2170 MHz Bandwidth Video Bandwidth @ 175 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW -- 50 -- frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 54 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 175 W CW Average Group Delay @ Pout = 175 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 175 W CW, f = 2140 MHz Gain Variation over Temperature ( - 30C to +85C) 1. Part internally matched both on input and output. GF Delay G -- -- -- -- -- 0.16 0.52 2.1 28 0.016 -- -- -- -- --
dB ns dB/C
MRF6S21190HR3 MRF6S21190HSR3 2 RF Device Data Freescale Semiconductor
B1 VBIAS + C8 RF INPUT R1 C7 R2 C6 C3 Z7 Z6 Z1 C1 Z2 Z3 Z4 Z5 Z8 DUT Z9 Z10 Z11 Z12 C2 Z13 C4 C9 C10 + C11 + C12 + C13
VSUPPLY
RF OUTPUT
+ C5 C14 C15 C16
+ C17
+ C18
VSUPPLY
Z1 Z2 Z3 Z4 Z5 Z6 Z7, Z8
0.744 0.632 0.400 0.042 0.322 0.313 0.123
x 0.084 x 0.084 x 0.450 x 0.580 x 0.580 x 0.040 x 0.121
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z9 Z10 Z11 Z12 Z13 PCB
0.145 x 1.320 Microstrip 0.508 x 0.320 Microstrip 0.429 x 0.279 Microstrip 0.322 x 0.084 Microstrip 0.735 x 0.084 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S21190HR3(HSR3) Test Circuit Schematic Table 5. MRF6S21190HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C4, C5 C2 C3 C6 C7, C9, C14 C8 C10, C15 C11, C12, C16, C17 C13, C18 R1 R2 Description Short Ferrite Bead 8.2 pF Chip Capacitors 47 pF Chip Capacitor 10 pF Chip Capacitor 56 pF Chip Capacitor 0.1 F Chip Capacitors 10 F, 50 V Electrolytic Capacitor 10 F Chip Capacitors 22 F Tantalum Capacitors 220 F, 50 V Electrolytic Capacitors 1.0 k, 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number 2743019447 ATC100B8R2JT500XT ATC100B470JT500XT ATC100B100JT500XT ATC100B560JT500XT CDR33BX104AKYS EMVY500ADA100MF55G GRM55DR61H106KA88 T491X226K035AT EMVY500ADA221MJA0G CRCW12061001FKEA CRCW120610R0FKEA Manufacturer Fairrite ATC ATC ATC ATC Kemet Nippon Chemi - Con Murata Kemet Nippon Chemi - Con Vishay Vishay
MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 3
R1 B1
R2
C6
C9 C10
C12
C13 C3 C7 C8 C4 C11
C1
CUT OUT AREA
C2
C17
C5 MRF6S21190H/HS Rev. 0 C14 C15 C16
C18
Figure 2. MRF6S21190HR3(HSR3) Test Circuit Component Layout
MRF6S21190HR3 MRF6S21190HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 18.5 18 17.5 Gps, POWER GAIN (dB) 17 16.5 16 15.5 15 14.5 14 13.5 2060 2080 2100 2120 2140 2160 2180 2200 IRL PARC Gps Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) D VDD = 28 Vdc, Pout = 54 W (Avg.), IDQ = 1600 mA 34 32 30 28 26 0 PARC (dB) -0.5 -1 -1.5 -2 -2.5 2220
-4 -8 -12 -16 -20 -24
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 54 Watts Avg.
16.5 Gps, POWER GAIN (dB) 16 15.5 15 14.5 14
Gps D VDD = 28 Vdc, Pout = 86 W (Avg.), IDQ = 1600 mA Single-Carrier W-CDMA, 3.84 MHz Channel Banwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF)
40 38 36 34 -2
D, DRAIN EFFICIENCY (%)
17
42
PARC (dB)
IRL
-5 -10 -15 -20 -25
-2.5 -3 -3.5 2080 2100 2120 2140 2160 2180 2200 -4 2220
13.5 PARC 13 12.5 2060
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 86 Watts Avg.
18 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA 17 Gps, POWER GAIN (dB) 2000 mA 1600 mA
-20 IDQ = 800 mA -30 1200 mA 2400 mA 2000 mA 1600 mA -50 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200
16
-40
15
1200 mA
14 800 mA 13 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21190HR3 MRF6S21190HSR3
RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -20 VDD = 28 Vdc, IDQ = 1600 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -10 VDD = 28 Vdc, Pout = 175 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3-U -30 IM5-U IM5-L -50 IM7-L IM7-U -60 1 10 TWO-TONE SPACING (MHz) 100 IM3-L
-30
-20
-40 3rd Order -50 5th Order -60 7th Order -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200
-40
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Intermodulation Distortion Products versus Tone Spacing
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -3 D -4 -5 20 -1 dB = 43.79 W -2 dB = 65.39 W -3 dB = 85.07 W Actual Ideal
45 D, DRAIN EFFICIENCY (%) 40 35 30 25 20 15 90
VDD = 28 Vdc, IDQ = 1600 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 30 40 50 60 70 80
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
19 -30_C 18 Gps, POWER GAIN (dB) 17 25_C 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1600 mA f = 2140 MHz 100 85_C 25_C TC = -30_C 85_C
60 50 D, DRAIN EFFICIENCY (%) 40 30 20 10 0 200 Gps, POWER GAIN (dB)
17
Gps
16
32 V 28 V
15
14 IDQ = 1600 mA f = 2140 MHz 13 0 100 Pout, OUTPUT POWER (WATTS) CW 200 VDD = 24 V
D
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21190HR3 MRF6S21190HSR3 6
Figure 11. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 54 W Avg., and D = 29%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -10 -20 -30 -40 -50 -60 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 14. Single - Carrier W - CDMA Spectrum
MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 7
f = 2220 MHz Zo = 10 Zload
f = 2060 MHz
Zsource
f = 2220 MHz
f = 2060 MHz
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 7.001 - j7.706 6.859 - j7.408 6.710 - j7.052 6.573 - j6.707 6.446 - j6.355 6.339 - j5.987 6.251 - j5.653 6.170 - j5.272 6.138 - j4.974 Zload W 2.628 + j0.118 2.602 + j0.415 2.604 + j0.672 2.566 + j0.901 2.536 + j1.175 2.538 + j1.411 2.547 + j1.654 2.533 + j1.892 2.508 + j2.119
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21190HR3 MRF6S21190HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M (INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF6S21190HR3
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B M
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
bbb ccc H
M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
C F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF6S21190HSR3
MRF6S21190HR3 MRF6S21190HSR3 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Feb. 2008 Mar. 2008 * Initial Release of Data Sheet * Added Fig. 12, MTTF versus Junction Temperature, p. 7 Description
MRF6S21190HR3 MRF6S21190HSR3 10 RF Device Data Freescale Semiconductor
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MRF6S21190HR3 MRF6S21190HSR3
Document Number: RF Device Data MRF6S21190H Rev. 1, 3/2008 Freescale Semiconductor
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